ماسفت قدرت FMR11N90E نوع N-Channel پکیج TO-3PF

Specification

Type Designator: FMR11N90E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 135 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 11 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 60 nC
Rise Time (tr): 32 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 1 Ohm