ماسفت TSM2NB60 نوع N-Channel پکیج TO-251

Specification

Type Designator: TSM2NB60CH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd: Maximum Power Dissipation: 44 W
|Vds|: Maximum Drain-Source Voltage: 600 V
|Vgs|: Maximum Gate-Source Voltage: 30 V
|Vgs(th)|: Maximum Gate-Threshold Voltage: 4.5 V
|Id: Maximum Drain Current: 2 A
Tj: Maximum Junction Temperature: 150 °C
Qg: Total Gate Charge: 9.4 nC
tr: Rise Time: 9.8 nS
Coss: Output Capacitance: 30.7 pF
Rds: Maximum Drain-Source On-State Resistance: 4.4 Ohm