ترانزیستور 2SD1047 نوع NPN پکیج TO-3P

Specification 

Product Category: Bipolar Transistors – BJT
Mounting Style: Through Hole
Package / Case: TO-3P-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 140 V
Collector- Base Voltage VCBO: 200 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 700 mV
Maximum DC Collector Current: 12 A
Pd – Power Dissipation: 100 W
Gain Bandwidth Product fT: 20 MHz
Continuous Collector Current: 12 A
DC Collector/Base Gain hfe Min: 50
Product Type:BJTs – Bipolar Transistors