تراشه اپتوکوپلر TLP250 پکیج DIP

Specification
OP.CP TRN.10 TO 35V 11mA 2500Vrms
Transistor Inverter
Inverter For Air Conditionor
IGBT Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8−lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
•  Input threshold current: IF5mA(max.)
•  Supply current (ICC): 11mA(max.)
•  Supply voltage (VCC): 10−35V
•  Output current (IO): ±1.5A (max.)
•  Switching time (tpLH/tpHL): 1.5µs(max.)
•  Isolation voltage: 2500Vrms(min.)
•  UL recognized: UL1577, file No.E67349
•  Option (D4) type