ماسفت IRFD220 نوع N-Channel

Specification

Id – Continuous Drain Current:800 mA
Vds – Drain-Source Breakdown Voltage:200 V
Rds On – Drain-Source Resistance:800 mOhms
Transistor Polarity:N-Channel
Vgs – Gate-Source Breakdown Voltage:20 V
Maximum Operating Temperature:+ 150 C
Pd – Power Dissipation:1 W
Mounting Style:Through Hole
Package / Case:HVMDIP-4
Packaging:Tube
Configuration:Single Dual Drain
Fall Time:22 ns
Minimum Operating Temperature:- 55 C
Rise Time:22 ns
Factory Pack Quantity:2500
Typical Turn-Off Delay Time:19 ns