ماسفت IRF630 نوع N-Channel پکیج TO-220

Specification

Specification 
Product Category: MOSFET
Technology: Si
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 200 V
Id – Continuous Drain Current: 9 A
Rds On – Drain-Source Resistance: 400 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 31 nC
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 75 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Forward Transconductance – Min: 3 S
Height: 9.15 mm
Length: 10.4 mm
Product Type: MOSFET
Rise Time: 15 ns
Series: IRF630
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-On Delay Time: 10 ns
Width: 4.6 mm