تراشه اپتوکانتر TP806 / OS806

Specification

IR Diode Continuous Forward Current: 50 mA
IR Diode Reverse Voltage: 5 V
Transistor Collector Currant: 20 mA
Transistor Power Dissipation: 100 mW
IR Diode Peak Power Currant(Pulse Wide 1μS, 300 pps): 3 A
Diode Power Dissipation: 175 mW
Phototransistor Collector-Emitter Voltage: 30V
Phototransistor Emitter-Collector Voltage: 5V
Operating Temperature Range: -40℃to + 85℃
Storage Temperature Range: -50℃to + 100℃